Substrate
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12 pulgadang SIC substrate silicon carbide prime grade diameter na 300mm malaking sukat 4H-N Angkop para sa high power device na nagpapakalat ng init
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Diametro 300x1.0mmt Kapal na Sapphire Wafer C-Plane SSP/DSP
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HPSI SiC wafer diametro: 3 pulgada kapal: 350um± 25 µm para sa Power Electronics
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8 pulgada 200mm Sapphire substrate sapphire wafer na manipis ang kapal 1SP 2SP 0.5mm 0.75mm
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8 pulgadang SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade pasadyang pinakintab na substrate
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Mga wafer na sapiro na may iisang kristal na Al2O3 99.999% Diametro 200mm na may kapal na 1.0mm 0.75mm
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156mm 159mm 6 pulgadang Sapphire Wafer para sa carrier na C-Plane DSP TTV
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C/A/M axis 4 pulgadang sapphire wafers na may iisang kristal na Al2O3,SSP DSP na may mataas na tigas na sapphire substrate
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3 pulgadang Mataas na kadalisayan na Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Diameter2inch bagong produkto
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8 pulgada 200mm Silicon Carbide SiC Wafers 4H-N type na Produksyon grado 500um kapal
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2 Pulgada 6H-N Silicon Carbide Substrate Sic Wafer Dobleng Pinakintab na Konduktibong Prime Grade Mos Grade