SiC
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12 pulgadang SIC substrate silicon carbide prime grade diameter na 300mm malaking sukat 4H-N Angkop para sa high power device na nagpapakalat ng init
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8 pulgadang SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade pasadyang pinakintab na substrate
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HPSI SiC wafer diametro: 3 pulgada kapal: 350um± 25 µm para sa Power Electronics
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3 pulgadang Mataas na kadalisayan na Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Diameter2inch bagong produkto
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8 pulgada 200mm Silicon Carbide SiC Wafers 4H-N type na Produksyon grado 500um kapal
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2 Pulgada 6H-N Silicon Carbide Substrate Sic Wafer Dobleng Pinakintab na Konduktibong Prime Grade Mos Grade
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12-Pulgadang 4H-SiC wafer para sa mga AR glasses
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HPSI SiC Wafer ≥90% Transmittance Optical Grade para sa AI/AR Glasses
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Para sa Ar Glasses
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4H-SiC Epitaxial Wafers para sa mga Ultra-High Voltage MOSFET (100–500 μm, 6 na pulgada)
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SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon