SiC
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12 inch SIC substrate silicon carbide prime grade diameter 300mm malaking sukat 4H-N Angkop para sa high power device na pag-aalis ng init
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8 inch SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade custom polished substrate
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HPSI SiC wafer dia:3inch kapal:350um± 25 µm para sa Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch bagong produkto
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um kapal
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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SiC Substrate SiC Epi-wafer conductive/semi type 4 6 8 pulgada
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SiC Epitaxial Wafer para sa Mga Power Device – 4H-SiC, N-type, Low Defect Density
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4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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3 pulgadang High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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4H-N 8 pulgadang SiC substrate wafer Silicon Carbide Dummy Research grade 500um kapal