Substrate
-
3 pulgadang Diametro 76.2mm na sapiro na wafer na may kapal na 0.5mm C-plane SSP
-
8 pulgadang Silicon wafer P/N-type (100) 1-100Ω dummy reclaim substrate
-
4 pulgadang SiC Epi wafer para sa MOS o SBD
-
12pulgadang Sapphire Wafer C-Plane SSP/DSP
-
2 pulgada 50.8mm Silicon wafer FZ N-Type SSP
-
2 pulgadang SiC ingot Diametro 50.8mmx10mmt 4H-N monocrystal
-
200kg C-plane Saphire boule 99.999% 99.999% monocrystaline KY method
-
4 na pulgadang Silicon wafer FZ CZ N-Type DSP o SSP Test grade
-
4 na pulgadang SiC Wafers 6H Semi-Insulating SiC Substrates na prime, research, at dummy grade
-
6 na pulgadang HPSI SiC substrate wafer na Silicon Carbide na Semi-insulting SiC wafer
-
4 na pulgadang Semi-insulting SiC wafers na HPSI SiC substrate Prime Production grade
-
3 pulgada 76.2mm 4H-Semi SiC substrate wafer na Silicon Carbide Semi-insulting SiC wafers