substrate
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SiC substrate P-type 4H/6H-P 3C-N 4inch na may kapal na 350um Production grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-type na SiC wafer 4H/6H-P 3C-N 6inch na kapal 350 μm na may Primary Flat Orientation
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Proseso ng TVG sa quartz sapphire BF33 wafer Glass wafer punching
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Single Crystal Silicon Wafer Si Substrate Type N/P Opsyonal Silicon Carbide Wafer
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N-Type SiC Composite Substrates Dia6inch Mataas na kalidad na monocrystaline at mababang kalidad na substrate
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Semi-Insulating SiC sa Si Composite Substrates
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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Synthetic Sapphire boule Monocrystal Sapphire Blank Diameter at kapal ay maaaring ipasadya
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N-Type SiC sa Si Composite Substrates Dia6inch
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SiC substrate Dia200mm 4H-N at HPSI Silicon carbide
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3inch SiC substrate Production Dia76.2mm 4H-N