Substrate
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SiC substrate 3 pulgada 350um kapal HPSI type Prime Grade Dummy grade
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Ang Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade na kapal ay maaaring ipasadya
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6 pulgadang Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H type Diameter 4inch 6inch Kapal 5-10mm Research / Dummy Grade
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6 na pulgadang sapiro Boule sapiro blangko na iisang kristal Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 pulgadang Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Kapal
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2 pulgadang silicon carbide substrate 6H-N na pinakintab na dobleng panig na diyametro 50.8mm na grado ng produksyon at grado ng pananaliksik
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4 pulgada 〈111〉± 0.5°Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4 pulgada na may kapal na 350um Grado ng produksyon Grado ng dummy
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4H/6H-P 6 pulgadang SiC wafer na may Sero MPD na Grado ng Produksyon, Dummy Grado
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P-type SiC wafer 4H/6H-P 3C-N 6 pulgadang kapal 350 μm na may Pangunahing Patag na Oryentasyon