SiC
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6 pulgadang Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H type Diameter 4inch 6inch Kapal 5-10mm Research / Dummy Grade
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 pulgadang Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Kapal
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2 pulgadang silicon carbide substrate 6H-N na pinakintab na dobleng panig na diyametro 50.8mm na grado ng produksyon at grado ng pananaliksik
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N-Type SiC Composite Substrates Diameter 6inch Mataas na kalidad na monocrystaline at mababang kalidad na substrate
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Mga Semi-Insulating SiC Composite Substrate na Diametro 2 pulgada 4 pulgada 6 pulgada 8 pulgada HPSI
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N-Type SiC sa Si Composite Substrates Diameter 6inch
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SiC substrate Diameter200mm 4H-N at HPSI Silicon carbide
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3 pulgadang Diametro ng Produksyon ng SiC substrate 76.2mm 4H-N
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SiC substrate na may gradong P at D na Diametro 50mm 4H-N 2 pulgada
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SiC Ingot 4H-N uri Dummy grade 2 pulgada 3 pulgada 4 pulgada 6 pulgada kapal:＞10mm