SiC
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer para sa MOS o SBD
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SiC Epitaxial Wafer para sa Mga Power Device – 4H-SiC, N-type, Low Defect Density
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4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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3 pulgadang High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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4H-N 8 pulgadang SiC substrate wafer Silicon Carbide Dummy Research grade 500um kapal
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide substrate
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Au coated wafer，sapphire wafer，silicon wafer，SiC wafer ，2inch 4inch 6inch，Gold coated kapal 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silicon carbide substrate 6H-N Type 0.33mm 0.43mm double-sided polishing Mataas na thermal conductivity mababang paggamit ng kuryente
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SiC substrate 3inch 350um kapal ng HPSI type Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade kapal ay maaaring ba customized
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6 sa Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade