Mga kagamitan sa semiconductor
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SiC crystal growth furnace SiC Ingot growing 4inch 6inch 8inch PTV Lely TSSG LPE growth method
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Maliit na table laser punching machine 1000W-6000W minimum na siwang 0.1MM ay maaaring gamitin para sa metal glass ceramic na materyales
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High precision laser drilling machine para sa sapphire ceramic material gem bearing nozzle drilling
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Sapphire single crystal Al2O3 growth furnace KY method Kyropoulos produksyon ng mataas na kalidad na sapphire crystal
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Monocrystalline silicon growth furnace monocrystalline silicon ingot growth system temperatura kagamitan hanggang sa 2100℃
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Sapphire crystal growth furnace Czochralski single crystal furnace CZ na paraan upang palaguin ang mataas na kalidad na sapphire wafer