Mga produkto
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Paraan ng pagpoproseso sa ibabaw ng titanium-doped sapphire crystal laser rods
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um kapal
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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200mm 8inch GaN sa sapphire Epi-layer wafer substrate
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Sapphire tube KY Paraan lahat transparent Nako-customize
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6 Inch Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling equipment para sa Glass Drilling thickness≤20mm
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Microjet laser technology equipment wafer cutting SiC material processing
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Silicon carbide diamond wire cutting machine 4/6/8/12 inch SiC ingot processing
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Paraan ng CVD para sa paggawa ng mataas na kadalisayan ng SiC na hilaw na materyales sa silicon carbide synthesis furnace sa 1600 ℃
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Silicon carbide resistance mahabang crystal furnace na lumalaking 6/8/12inch na SiC ingot crystal PVT method
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Double station square machine monocrystalline silicon rod processing 6/8/12 inch surface flatness Ra≤0.5μm